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Design of a Broadband Integrated Notch Filter in Silicon Nitride

2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)(2020)

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摘要
A broadband integrated notch filter, using the silicon nitride (Si 3 N 4 ) platform, is presented. It achieves an extinction ratio (ER) of 60 dB and a full width at half maximum (FWHM) of 10 nm at the central wavelength (CW) 785 nm. The main filter components are Bragg gratings (BGs). For separating the occurring reflections from the input waveguide, two identical BGs are combined with a directional coupler (DC) acting as optical circulator. The 3-dB bandwidth of the passband (790 nm to 1200 nm) is more than 400 nm.
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关键词
broadband integrated notch filter,silicon
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