Structural and optical properties chemically grown Zinc Oxide thin film

Amongst various metal oxides, Zinc Oxide (ZnO) is widely used semiconducting material amongst various II-VI group materials due to its various properties like wide energy band gap (3.3 eV), strong binding energy of 60 meV, higher transparency,low electron affinity sensitivity and selectivity for device grade applications. For this study purpose, for this study purpose (ZnO) thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) technique on amorphous glass substrate at room temperature. These films were then annealed for about 2 hours in air atmosphere. The structural studies reveal the increase in grain size upto 400oC. The change in crystallite size were observed in the Atomic Force Microscopy (AFM) images. The optical studies were also in well agreement with the structural analysis.