Low temperature high voltage analog devices in a 3D sequential integration

We built an original stackable 2.5V device on FDSOI with analog performance comparable to high temperature reference and passing the PBTI reliability criteria. In depth characterization of low temperature (LT) gate stack devices with thick EOT are investigated, enabling to draw guidelines for future optimization. This paper demonstrates the feasibility of LT high V DD analog devices, which can be used for sensor read out operation, paving the way to ultraminiaturized smart sensor arrays.