Carrier Transport In Multilayer n-MoSe 2 And p-Germanium Heterojunction Back Gated Field Effect Transistors

Wasi Uddin,Veerendra Dhyani,Gufran Ahmad,Samaresh Das

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2020）

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摘要

A CMOS compatible MoSe 2 /Ge heterojunction field effect transistor has been fabricated. The electrical characterization of asymmetric contact device has been studied by switching the source contact. Temperature dependent measurements reveals a barrier height of 73.8 meV at n-MoSe 2 /(Cr/Au) interface. These findings reveal the selection of source and drain is crucial for the design of such heterojunction devices.

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