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HgTe/HgCdTe量子阱中巨大电子Rashba自旋分裂

ACTA PHYSICA SINICA(2004)

Cited 15|Views5
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Abstract
主要研究具有倒置能带结构的n-HgTe/HgCdTe第三类量子阱Shubnikov-de Haas(SdH)振荡中的拍频现象.发现在量子阱中电子存在强烈的Rashba自旋分裂,通过对SdH振荡进行三种不同方法的分析:SdH振荡对1/B关系的快速傅里叶变换、SdH振荡中拍频节点分析和对SdH振荡拍频数值拟合,得到了完全一致的电子Rashb8自旋分裂能量(28-36 meV).
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Key words
n-HgTe/HgCdTe,Shubnikov-de Haas,Rashba spin splitting
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