Structural Characterization of Epitaxial LSMO Thin Films Grown on LSAT Substrates

High resolution X-ray measurements were used to characterize the crystalline structure of La0.67Sr0.33MnO3 (LSMO) thin films grown on La0.26Sr0.76Al0.61Ta0.37O3 (LSAT) substrate under a small compressive strain (-0.2%). The accommodation of lattice mismatch gives rise to a lattice modulation in the structure. A series of linear h scans (rocking curves) across LSMO 004 diffraction for various values of phi angle (rotation of sample around [001] axis) was performed to provide better insight into this structural feature. Despite the cubic structure of the substrate the stress relief mechanism of the LSMO film is considerably anisotropic. Whereas in [010] substrate direction no LSMO lattice modulation was observed, in [100] direction a lattice modulation was developed having no influence on good electrical properties of the prepared LSMO films.