Thickness-Lamé Thin-Film Piezoelectric-on-Silicon Resonators
Journal of Microelectromechanical Systems(2020)
Abstract
In this paper, Thickness-Lamé (TL) mode piezoelectrically-transduced silicon resonators are studied and demonstrated. It will be shown that unlike Planar-Lamé resonance modes, Thickness-Lamé modes could be efficiently excited using sputtered polycrystalline piezoelectric films such as Scandium Aluminum Nitride (ScAlN) due to the constructive contribution of both d31 and d33 piezoelectric coefficie...
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Key words
Resonators,Temperature,Silicon,Resonant frequency,Couplings,Aluminum nitride,III-V semiconductor materials
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