A 2T-MONOS Embedded Flash Macro With 65-nm SOTB Technology Achieving 0.15-pJ/bit Read Energy With 80-MHz Access for IoT Applications

Ken Matsubara,Tsutomu Nagasawa,Yoshinobu Kaneda,Hidenori Mitani,Takashi Iwase,Yasunobu Aoki, Kohei Hashimoto,Toshiaki Morioka,Keiichi Maekawa,Takashi Ito,Hiroyuki Kondo,Takashi Kono

IEEE Solid-State Circuits Letters（2020）

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摘要

To expand Internet of Things application ranges, ultralow active energy operations are essential in edge devices. Especially, read energy reduction in embedded Flash (eFlash) memory is strongly required to enable real-time sensing with limited energy generated by energy harvesting (EH). In this letter, 1.5-MB and 256-KB 2T-MONOS eFlash macros are developed with 65-nm silicon-on-thin-box (SOTB) tec...

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关键词

Solid state circuits,Memory management,Sensors,Data communication,Edge computing,Leakage currents,Receivers

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