14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing

Eric Hunt-Schroeder,Darren Anand,John Fifield,Michael Roberge,Dale Pontius,Mark Jacunski,Kevin Batson, Matthew Deming,Faraz Khan,Dan Moy,Alberto Cestero,Robert Katz,Zakariae Chbili,Edmund Banghart,Liu Jiang,Balaji Jayaraman,Rajesh R. Tummuru,Ramesh Raghavan, Amit Mishra,Norman Robson,Toshiaki Kirihata

IEEE Solid-State Circuits Letters（2018）

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摘要

An 8Kx192b charge trap transistor one time programmable memory (OTPM) is designed and manufactured in GLOBALFOUNDRIES 14-nm bulk FinFET technology without process adders or additional masks. A write timer state machine issues multicycle 192b parallel programming with per bit overwrite protection to minimize stress conditions during a write. On-chip generated voltages are temperature dependent, ena...

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关键词

Programming,Transistors,Temperature measurement,Hardware,Temperature sensors,Dynamic programming

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