Fast Cascoded Quenching Circuit for Decreasing Afterpulsing Effects in 0.35- $\mu$ m CMOS

In this letter, we present a fully integrated single-photon avalanche diode (SPAD) using a fast cascoded quenching circuit (QC) fabricated in a 0.35-μm CMOS process. The QC features a fast active quenching time of only 0.48 ns and an adjustable total dead time (9.5-17 ns) to further reduce afterpulsing effects. To prove the quenching performance, the circuit was integrated together with a large-ar...