Backside Alpha-Irradiation Test In Flip-Chip Package In Euv 7 Nm Finfet Sram

Taiki Uemura,Byungjin Chung,Jeongmin Jo,Hai Jiang,Yongsung Ji,Tae-Young Jeong,Rakesh Ranjan,Seungbae Lee,Hwasung Rhee,Sangwoo Pae,Euncheol Lee,Jaehee Choi,Shota Ohnishi,Ken Machida

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2020）

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Abstract

This paper proposes an alternative method of alpha-irradiation test in flip-chip packages, backside irradiation test in EUV 7nm FinFET SRAM. The backside-test is conducted in backside-ground flip-chips. The sample thickness is measured, and the correlation factor is calculated by Monte-Carlo simulations. The results of backside- and front-side-tests show the dependability of the proposed method.

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Key words

soft error, 7 nm FinFET, SRAM, SER, SEU

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