Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications
Applied Surface Science(2020)
Abstract
•Chemical-solution-deposition processing of dielectric gate layers.•Aluminum hydroxide and aluminum oxide films for MIM capacitor applications.•Low leakage currents in the 1×10-4-9×10-4 A/cm2 range.•High-k dielectric aluminum hydroxide layer in the 27–12 interval.
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Key words
Aluminum hydroxide,Aluminum oxide,Dielectric layers,Chemical bath deposition,MIM capacitor device
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