Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications

•Chemical-solution-deposition processing of dielectric gate layers.•Aluminum hydroxide and aluminum oxide films for MIM capacitor applications.•Low leakage currents in the 1×10-4-9×10-4 A/cm2 range.•High-k dielectric aluminum hydroxide layer in the 27–12 interval.