Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range
Technical Physics Letters(2020)
摘要
Quantum photoresponse yield of a silicon XUV avalanche photodiode prototype with 1.5‑mm-diameter active region has been studied in the 320–1100 nm wavelength range. It is established that the proposed avalanche photodiode has the external quantum efficiency above 20 electron/photon in the 580–1000 nm range at a reverse bias voltage of 485 V.
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关键词
avalanche photodiode,XUV range,silicon,dark current.
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