Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs
IEEE Transactions on Electron Devices(2020)
摘要
Long data retention is a critical requirement for many of the potential applications of HfO
2
-based ferroelectric field-effect transistors (FeFETs). However, methods for its rapid assessment are still missing. In this article, we report a detailed investigation of the retention and switching properties of FeFETs fabricated in the 28-nm high-
${k}$
metal gate technology. We identify a clear correlation between the two properties and propose a method for fast prediction of the device retention behavior, which can be easily adopted to judge different fabrication processes. Finally, we extend the validity of the method to a direct assessment of disturb-free operating conditions, which may be particularly valuable for FeFET array operation.
更多查看译文
关键词
Disturb,ferroelectric field-effect transistor (FeFET),hafnium oxide (HfO₂),retention,switching
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要