Viability of Post Transition Metal As Anode for Nano Ionic Resistive Switching Based Devices

The phenomenon of electric field mediated resistance switching in metal oxides is critical to nanoscale electronic devices ranging from conventional energy efficient MOSFETs to emerging memory devices as well as artificial neuron and synaptic devices. Such resistance transition can be facilitated by two main mechanisms: i) conduction of oxygen ions in non-stoichiometric compounds e. g. HfO x, AlO x. In this case the redox reaction of the oxide itself is manifested by oxygen anion transport, ii) the oxides serve as electrolyte dielectrics to conduct electrochemically active metal cations, such as Ag or Cu, forming the so-called electrochemical metallization memory (ECM) devices.