Facile Synthesis, Characterization and Intensity-Dependent Nonlinear Absorption of Ni-doped (γ and Β)-Bab2o4 Nanostructures

Intensity-dependent nonlinear optical absorption and optical limiting behavior of Ni2+-doped (γ and β)-BaB2O4 nanostructures were examined by open-aperture Z-scan technique under nanosecond pulsed green laser excitation. Observation of reverse saturable absorption (RSA) with variation in nonlinear absorption coefficient as function of on-axis peak intensity ascertains the presence of sequential 2PA process (1PA + ESA). Due to the introduced near-resonant energy state through incorporation of Ni2+ ions, the material exhibits excited state absorption (ESA). Here, the observed sequential 2PA in Ni2+-doped γ-BaB2O4 involves the 1T1g(G) states of 3d8–3d8 and 1T1g(D) states of Ni2+, while Ni-doped β-BaB2O4 undergoes the electronic transition involving intraionic 3d8–3d8 transition of Ni2+ and self-trapped excitonic state of BBO. Interestingly, as the dopant concentration and on-axis intensity increased, 2PA coefficient was found to be increased. 0.05 M Ni2+-doped β-BaB2O4 nanostructures possess higher 2PA coefficient (2.31 × 10−10 m/W) and lower onset limiting threshold (0.79 × 1012 W/m2), which makes it a promising candidate for optical limiting applications. The result suggests that band structure tunability to induce excited state absorption with enhanced nonlinear absorption coefficient is possible through Ni doping in β-BaB2O4 nanostructures.