A GISAXS Analysis on Capped Ge Nanodots in Layer Structures

The GISAXS intensity from buried Ge nanodots have been examined both by GISAXS/reflectivity measurements and also simulations with Distorted Wave Born Approximation (DWBA). The validity and the condition of using Born Approximation (BA) are discussed from the simulations based on the layer structures modelled from a reflectivity analysis. As expected in the previous kinematical analysis, use of BA is reasonable in determining the size and the shape of very small or thin nanodots. Several effects of layer structures on the GISAXS analysis have been discussed for further analysis.