N-dopedwInGaNwactivewlayer Ohmic OhmicSchottky AMw 1 . 5
semanticscholar(2019)
摘要
The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriers’ mobility, a high absorption coefficient along with good radiation tolerance. However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design.
更多查看译文
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要