Towards high mobility InSb nanowire devices

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 K by means of field effect transport measurements using a model consisting of a nanowiretransistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of ∼ × 2.5 104 cm V s. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate. S Online supplementary data available from stacks.iop.org/nano/26/215202/mmedia