Modeling and Analysis of Biological Cells in DRAM lmplementation

ln this paper, we propose a novel technique in modeling and :nalysis of biological cells to implement DRAM storage el--nrents in the post-CMOS era. The motivation is based on 'he known characteristics of biological cells. By applying an ..lectric pulse with a fixed duration, we may calculate the . oltage across the cytoplasmic membrane, also called a cell :nembrane or plasma membrane, and the nuclear membrane ',i'ithin biological cells. The induced voltage across the mem:,r&r€s may function like a capacitor does in a DRAM storage 'lement. The electron charge accumulated on a membrane .also leaky, similar to the traditional DRAM. The electron harge and discharge time constants for cytoplasmic and nulear membranes can be fine-tuned through careful selection 'f different sizes and types of biological cells. Experimen'al results by simulation show that about 75 percents (75%) ,f the applied voltage is distributed across the cytoplasmic ::rembrane. Hence, cytoplasmic membrane is more suitable n the application of DRAM implementation. This means 'hat when applying 0.9y IV of voltage across a biological ell, roughly 0.7V -0.75V of the voltage is induced across the r.toplasmic membrane. The electron charge and discharge 'ime can be achieved within 100 ns for certain size and type 'f biological cells. The required DRAM refresh frequency is 'irerefore approximately 10 MHz for such biological cells.