Reconfigurable RF-MEMS Circuits and Low Noise Amplifiers Fabricated Using a GaAs MMIC Foundry Process Technology

We present key building blocks for monolithically integrated (i.e. single-chip) RF-MEMS enabled reconfigurable low-noise amplifiers and RF front-ends that have been fabricated on a GaAs wafer using a MMIC foundry process technology. Measured results of a tunable (frequency-agile) 16-24 GHz GaAs MMIC based RFMEMS impedance matching network show 0.4 dB of minimum in-band insertion loss and an on-chip integrated wideband (unmatched) LNA circuit present 15-20 dB of gain together with 2 dB of noise figure at 6-26 GHz, respectively. Simulated results of a GaAs MEMS-MMIC based 15-20 GHz tunable (dual-band) LNA circuit show 12-17 dB and 2.55.5 dB of in-band gain and noise figure, respectively.