High-Power Generation for Mm-Wave 5G Power Amplifiers in Deep Submicrometer Planar and FinFET Bulk CMOS
IEEE Transactions on Microwave Theory and Techniques（2020）
关键词
FinFETs,Capacitance,Integrated circuit reliability,5G mobile communication,CMOS technology,Bulk CMOS,distributed active transformer (DAT),FinFET,high-power amplifier (PA),millimeter-Wave (mm-Wave) 5G,power combining,reliability,stacked FET
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