Several Process Techniques & Pixel Source Follower Schemes to improve the Pixel Temporal Noise

Several Process Techniques are introduced to improve the Pixel Temporal Noise. These techniques focus on the Pixel Source Follower Transistor. The first is to apply the Fluorine Implantation, and through this process, the Blinking pixels are decreased so effectively. The second is to add the UV curing process. This process decreases the Dit in whole pixel transistors and photodiode but the noise improving effect becomes less than expected. The third is to use the LPRO (low pressure radical oxidation) process. This process is known as an effective method to make the uniform oxide thickness and to decrease the Dit in the oxide trap due to the radical ions. But different from the expectation, the noise performance was not much improved comparing with the PNO-Gox case. The forth is the Thin Gate Oxide Source Follower. This is the most economical and simple (=No additional process) technique. The thinner gate oxide promises the better noise performance, basically independent on its threshold voltage. Using TnTk and TkTn SF Tr. scheme, the Noise analysis was done additionally and the best case was TnTk SF Tr. case. KeywordsFluorine implantation, UV curing, Thin Gox Source Follower, Pixel Temporal Noise, Blinking Pixels, TkTn & TnTk SF