Vanadium Dioxide (VO2) as a tuning element in reconfigurable inductors exploiting its IMT transition: VO2 undergoes an electronic and structural phase transition from an insulator with monoclinic crystalline structure to a metallic rutile phase when

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a Vanadium Dioxide (VO2) switch placed in the inter-winding space in an unprecedented manner. The VO2 thin film barshaped switch is electrically connected to provide a temperature-selective current path that effectively shortcircuits a part of the inductor coil changing the inductance of the device. The inductor is fabricated on a high-resistivity Silicon substrate (HR-Si) using a CMOS compatible 2D planar low-cost technology (4 photolithography steps). The design, optimized to work in the 4 to 10 GHz range, provides measured inductances at 5 GHz of 2.1 nH at 20 °C and 1.35 nH at 100 °C with good stability in the entire frequency band (4-10 GHz) resulting in a reconfiguration ratio of 55 %. The quality factor (Q-factor) at 7 GHz is about 8 at 20 °C (OFF-state) and 3 at 100 °C (ON-state), outperforming tunable inductors employing VO2 with 2 orders of magnitude higher Q-factor and a smaller footprint. This represents an advancement for the state-of-the-art of 2D CMOS compatible inductors in the considered frequency range.