A Design Of InGaP/GaAs/Si Solar Cells with High Quantum Efficiency Based on Nanostructures

In this paper, a nanostructured solar cells InGaP/GaAs/Si is presented. Proposed to increase the quantum efficiency of solar cells, a technique to reduce losses of non-radiative recombination and increase of the absorption coefficient is used. Simulation results show that the designed structure, with regard to the lattice matching between layer in addition to achieving high quantum efficiency, absorbs more of the sun's light spectrum. Solar cell in software version 3.20.2 silvaco simulations and quantum efficiency of 65% is reached.