Monolithically Integrated MZM with Segmented Driver in Photonic BiCMOS showing High ER

In this work, a Si depletion-type MZM monolithically integrated with a segmented driver using 0.25 μm SiGe:C photonic BiCMOS technology is demonstrated. The phase shifter has a total length of 6.08 mm and is divided into 16 sections which are driven by the driver segments. Electro-optic time-domain measurements show extinction ratio higher than 12 dB at 28 and 32 Gb/s with a differential input voltage swing equal to 800 mVpp. This is one of the highest extinction ratio values shown by a monolithically integrated Si MZM at those data rates. The driver dissipates a total DC power equal to 1.8 W.