Fully-printed organic PTAT voltage generators designed using a fast technique modeling

In this paper, the simulations and measurements of the first organic Proportional To Absolute Temperature (PTAT) voltage generators are presented. The circuits are based on fully-printed top-gate bottom-contact Organic Thin Film Transistors (OTFTs). The transistors, realized on a PEN (Polyethylene Naphtalate) flexible substrate respectively use Polytriarylamine and Acene-based diimide as organic semiconductors for P-type and N-Type. An iterative extraction procedure published in our previous work is applied to OTFTs with W/L ratios between 25 and 400 at temperatures ranging from 25°C to 100°C. Thanks to this extraction, the A-Si: H TFT (Amorphous-Silicon: Hydrogenated Thin Film Transistors) model is modified to take into account the specific parameter dependences of the devices. The proposed model allows predicting correctly OTFTs’ behavior with respect to the temperature and is used to design fully-printed organic PTAT voltage generators.