Temperature Dependence of the Wavelength Spectrum of a Resonantly Pumped W-OPIC Laser

Developing efficient semiconductor lasers capable of operating in the mid-infrared spectrum at a temperature reasonably close to room temperature requires further characterization and study of these semiconductors. The emitted wavelength of a semiconductor laser exhibits a parabolic temperature dependence, with values increasing as temperature increases. Additionally, when Fourier transformed infrared spectra of a W-optical pumping injection cavity laser are taken with sufficient resolution, a fine structure is observed within the central peak. By studying the location of this large peak and the separation between the fine peaks of this structure, a change in the index of refraction can be determined. This value could provide insight into the optical pumping dependence of the gain. The emitted wavelength varied from 2.8 μm at 78 K to 3.3 μm at 325 K. Pump wavelengths varied across the temperature range to maximize the signal produced by the sample, and both the pump wavelength and emitted wavelength exhibit a parabolic relationship with temperature. Future research is necessary to determine the cause of this parabolic dependence and how it relates to a possible change in index of refraction.