14-nm FinFET Technology for Analog and RF Applications

This paper describes the features and performance of an analog and RF device technology development on a 14-nm logic FinFET platform. An optimized single-side gate contact RF device layout shows a Ft/Fmax of 314/180 GHz and 285/140 GHz for N and PFinFET device, respectively. The double-side gate contact structure with contact on either end of active gate enhances the peak Fmax performance to 227 a...