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Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal-Insulator-Metal Tunneling Devices

Yanwei He,Hao Tian,Protik Das,Zhenjun Cui,Pedro Pena, Ivan Chiang,Wenhao Shi,Long Xu,Yuan Li,Tianchen Yang,Miguel Isarraraz,Cengiz S. Ozkan,Mihrimah Ozkan,Roger K. Lake,Jianlin Liu

ACS APPLIED MATERIALS & INTERFACES（2020）

Cited 10|Views60
Key words
hexagonal boron nitride (h-BN),molecular beam epitaxy (MBE),substrate engineering,two-dimensional (2D),electrical device
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