Low Resistance Tio2/P-Si Heterojunction For Tandem Solar Cells
MATERIALS(2020)
摘要
Niobium-doped titanium dioxide (Ti1-xNbxO2) films were grown onp-type Si substrates at low temperature (170 degrees C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 degrees C in an H(2)atmosphere for 30 min. It was shown that the Ti0.72Nb0.O-28(2)/p(+)-Si heterojunction fabricated on low resistivity silicon (10(-3)omega cm) had linear current-voltage characteristic with a specific contact resistivity as low as 23 m omega center dot cm(2). As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p(+)-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.
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关键词
thin films, solar cells, TiO2, p-Si heterojunction, atomic layer deposition
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