A Study of Single-Electron Tunneling Functionalities in Highly-Doped Silicon-on-Insulator Junctionless Transistors

As an extension of the continuous miniaturization trend for Si transistors, single-electron effects related to dopants in the nanoscale transistor channels have been recently considered for low-power and fundamental applications. Research on dopant-based single-electron tunneling (SET) functionality extends from single-donor quantum dots (QDs) to multiple-donor QDs. Different from using complex techniques for doping, we show that a simpler, uniform doping technique at high-concentration of nanoscale silicon-on-insulator (SOI) transistors can offer the statistical conditions for the formation of isolated multiple-donor clusters that allow SET functionality, even at room temperature.