Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

Advanced Intelligent Systems(2019)

引用 51|浏览38
暂无评分
摘要
In‐memory computing is a computing scheme that integrates data storage and arithmetic computation functions. Resistive random access memory (RRAM) arrays with innovative peripheral circuitry provide the capability of performing vector‐matrix multiplication beyond the basic Boolean logic. With such a memory–computation duality, RRAM‐based in‐memory computing enables an efficient hardware solution for matrix‐multiplication‐dependent neural networks and related applications. Herein, the recent development of RRAM nanoscale devices and the parallel progress on circuit and microarchitecture layers are discussed. Well suited for analog synapse and neuron implementation, RRAM device properties and characteristics are emphasized herein. 3D‐stackable RRAM and on‐chip training are introduced in large‐scale integration. The circuit design and system organization of RRAM‐based in‐memory …
更多
查看译文
关键词
accelerators, in-memory computing, neural networks, process-in-memory, resistive memory
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要