High-Current State triggered by Operating-Frequency Change

L. Xu,J. Cao,S.-J. Wen,R. Fung, J. Markevitch,D. R. Ball,B. L. Bhuva

2020 IEEE International Reliability Physics Symposium (IRPS)（2020）

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摘要

A novel failure mechanism, operating-frequency-triggered latchup-like high-current state, has been observed at the 7-nm bulk FinFET node and is characterized in this paper. Results show that the operating frequency in the GHz range on an IC may lead to a significant increase in the substrate-injection current leading to latchup-like events.

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关键词

thermal runaway,temperature,micro latchup,substrate current,frequency

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