Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application

In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO ₂ /HfO ₂ sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity and memory window is obtained. Owing to the stable resistive behavior of HfO ₂ and insulator-metal transition of VO ₂ , the device shows excellent uniform switching parameters in both switching modes with a high on-state current density (1E4 A/cm ² ) and fast switching/recovery speed (< 30 ns). This self-selective resistive memory is of great potential in the high-density crossbar array, particularly for the future 3D-Vertical resistive random access memory (RRAM) integration.