Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs

In this letter, we present an experimental study on the frequency ( f ) dependence of trap generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin field-effect transistors (p-FinFETs), by adopting the direct-current current voltage (DCIV) method and an energy profiling technique. The interface trap generation ( $\Delta ~\text{N}_{IT}$ ) and bulk trap generation ( $\Delta ~\text{N}_{OT}$ ) are separated from the measured DCIV data and their ${f}$ dependences are independently investigated. The DCIV results indicate that the observed strong ${f}$ dependence of trap generation is primarily attributed to the ${f}$ -dependent $\Delta ~\text{N}_{OT}$ that exhibits a 36% reduction when ${f}$ increases from 10 Hz to 1 MHz. Furthermore, this ${f}$ -dependent $\Delta ~\text{N}_{OT}$ is mainly distributed between ${\text{E}_{v}}$ and ${\text{E}_{i}}$ , and exhibits a visible ${f}$ -dependent peak of energy density around ${\text{E}_{c}}$ .