Disorder Originated Unusual Mobility in Crystalline InGaZnO 4

IEEE Electron Device Letters(2020)

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摘要
Using calculations from first principles, the site disorder between Ga and Zn of crystalline InGaZnO4 is shown to play key roles in its unique transport properties. The analysis based on Density Functional Theory reveals that the various types of scattering centers stem from the charge imbalance between the ordered and disordered structures are the prime factor in explaining the carrier mobility o...
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关键词
Phonons,Zinc,Dispersion,Crystals,Electric potential,Optical scattering
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