Study of Charge Trapping Effects on AlGaN/GaN HEMTs under UV Illumination with Pulsed I-V Measurement

The charge trapping effects on AlGaN/GaN HEMTs under UV illumination are investigated using the pulsed current-voltage (I-V) measurement method. The test samples are unpassivated Schottky-gate HEMTs and metal-insulator-semiconductor HEMTs (MIS-HEMTs) with SiN gate dielectric. For HEMTs, the dominant charge trapping sources are the surface trap states, whereas, for MIS-HEMTs, they are trap states i...