Photoelectric properties of quasi one-dimensional layered KP15

MATERIALS LETTERS(2020)

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摘要
The quasi one-dimensional layered KP15 shows in-plane anisotropic electrical/optical properties and high carrier mobility. In this work, for the first time, its electrical/optical properties are studied by fabricating phototransistors based on mechanical exfoliated KP15 nanowires. The device shows high specific detectivity (>10(10) Jones throughout the visible band with peak value > 10(12) Jones) and fast response time (similar to 10 ms, shorter than most photodetectors based on 2D Mo or W sulfides). The excellent device performance suggests KP15 as a new candidate material for photonic and optoelectronic devices. (C) 2020 Elsevier B.V. All rights reserved.
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关键词
Electrical properties,Semiconductors,KP15,Photodetector,Quasi one-dimensional,Field effect transistor
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