Special Issue: Nanowire Field-Effect Transistor (FET).

Natalia Seoane,Antonio García-Loureiro,Karol Kalna

MATERIALS（2020）

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摘要

This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles' content.

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关键词

nanowire field-effect transistors,metal gate,material properties,fabrication,modelling,variability

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