Investigation of Defect Structure of CdTe Semiinsulating Crystals Using High Resolution X-ray Diffraction

Cadmium telluride (CdTe) is a technologically important II-VI compound semiconductor with a wide range of applications which require high-quality and defect-free substrates. Microstructural defects in cadmium telluride crystals can affect performance of CdTe-based semiconductor devices. To study this, the methods of high-resolution X-ray diffraction were used. The Krivoglaz kinematic theory was applied for interpreting experimental data. Evaluation of dislocation density obtained from the analysis values of half-widths rocking curves are presented.