High-Speed and 16 λ-WDM Operation of Ge/Si Electro-Absorption Modulator for C-Band Spectral Regime.

Junichi Fujikata,Masataka Noguchi,Seok-Hwan Jeong,Yosuke Onawa,Daisuke Shimura,Kazuki Kawashita,Riku Katamawari,Hideaki Okayama,Shigeki Takahashi,Hideki Ono,Hiroyuki Takahashi,Hiroki Yaegashi,Yasuhiko Ishikawa,Takahiro Nakamura

OFC（2020）

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摘要

We present high-speed of 100Gbps for PAM-4 signal and 16λ-WDM operations of a Ge/Si EAM in C-band. Operation wavelengths could be controlled by Ge/Si stack width, and 16 λ operation was demonstrated at 50 Gbps.

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关键词

C-band spectral regime,PAM-4 signal,WDM operations,Ge-Si electro-absorption modulator,16λ-WDM operations,Ge-Si EAM,Ge-Si stack width,bit rate 50 Gbit/s,bit rate 100 Gbit/s,GeSi

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