Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory
Microelectronics Reliability(2020)
Abstract
16nm single-level-cell (SLC) NAND flash memories with 1-bit ECC are shown to have excellent robustness to soft errors induced by terrestrial neutron radiation and alpha particles. Accelerated stress test studies were done at TRIUMF Neutron Facility for neutron induced soft errors and using calibrated alpha sources for accelerated alpha particle testing. Our results demonstrate excellent robustness of the memory device to soft error latch-up and single event upsets. Additionally, we report cross-site correlation results of accelerated alpha particle testing of 16nm NAND flash memories by comparing test results using Am-241 and Th-232 foils for higher confidence in the failure rate calculations. An acceleration factor of 1.66 × 104 between the two foils was used.
MoreTranslated text
Key words
Non-volatile flash memory,NAND flash,Neutron,Alpha particles,Single event upset,Single event latch-up,Single event effect,Failure rate
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined