Diffusion in GaN/AlN superlattices: DFT and EXAFS study

Ivan A. Aleksandrov,Timur V. Malin,Konstantin S. Zhuravlev,Svetlana V. Trubina,Simon B. Erenburg,Bela Pecz,Yahor V. Lebiadok

Applied Surface Science（2020）

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摘要

•Migration barriers of Al and Ga atoms in GaN and AlN have been calculated by DFT.•Al-Ga interdiffusion coefficient has been estimated for vacancy-mediated diffusion.•Experimental Al-Ga interdiffusion coefficient in GaN/AlN SLs agrees with theory.

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关键词

Diffusion,AlN,GaN,Density functional theory,Superlattice,EXAFS

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