Single-Chip L-Band 1500W Internally Matched AlGaN/GaN HEMT

In this paper, a high-power single-chip L-band internal matching power HEMT is reported. The total gate width of the chip is 90mm. The output matching circuit was made of ceramic chip, and the input matching circuit was made of GaAs quasi MMIC. The whole circuit and gallium nitride chip were soldered in a 17.4mm×24mm package. Under the condition of 100V drain voltage, 10µs pulse width and 1% duty cycle, the output power of the internal matching power HEMT is more than 1500W at 1.25-1.35GHz, the maximum output power is 1827w, the power gain is more than 17dB, the power density is more than 20W/mm and the max additional power efficiency is nearly 75%. According to the author's knowledge, this is the report of the highest output power, gain and power additional efficiency of single GaN HEMT in L-band synthetically.