Fem Simulation Of Thz Detector Based On Sb And Bi88sb12 Thermoelectric Thin Films

A terahertz (THz) detector based on thermoelectric thin films was simulated using the finite elements method. The thermoelectric circuit consisted of Sb and Bi88Sb12 150-nm films on the mica substrate. S-b, Bi88Sb12, and mica-substrate properties have been measured experimentally in the THz frequency range. The model of electromagnetic heating was used in order to estimate possible heating of Sb-Bi88Sb12 contact. THz radiation power varied from 1 mu W to 50 mW, and frequency varied in the range from 0.3 to 0.5 THz. The calculations showed a temperature difference of up to 1 K, voltage up to 0.1 mV, and responsivity of several mVW(-1). The results show that thin Sb and Bi - Sb thermoelectric films can be used for THz radiation detection at room temperatures.