Effect of V/III ratio on the surface morphologies of N-polar GaN films grown on offcut sapphire substrates

Chengguo Li,Kang Zhang,Qiaoyu Zeng,Qiao Wang,Zilan Li,Wei Zhao,Zhitao Chen

Journal of Crystal Growth（2020）

引用 8|浏览8

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摘要

•A low V/III ratio results in a rough N-polar GaN surface with large undulations.•Smooth N-polar GaN layer without hillocks can be grown at a high V/III ratio.•The V/III ratio influences the step-bunching rate in the growth of N-polar GaN.

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关键词

A1. Polarity,B1. Nitrides,A1. Surface morphology,A1. V/III ratio,A3. Metal-organic vapor phase epitaxy

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