Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors

Mrad Mrad,Christophe Licitra,Amélie Dussaigne,Victor Yon,Jérôme Richy,Matthieu Lafossas,Joel Kanyandekwe,Guy Feuillet,Matthew Charles

Journal of Crystal Growth（2020）

引用 3|浏览56

暂无评分

摘要

•Ga pollution in CCS reactor strongly affects the growth process stability of InGaN.•Ga pollution decreases In incorporation and increases InGaN layer thickness.•Clean CCS reactor chamber reduces the degree of complexity in InGaN MOVPE growth.

查看译文

关键词

A3. Metal organic vapor phase epitaxy,A1. High resolution X-ray diffraction,A1. Atomic force microscopy,B1. Nitrides,B1. Gallium compounds,B3. Light emitting diodes

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要