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InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics

H.Q. Luc,Y.K. Zhang,D.Y. Jin,H.S. Huynh,H.M.T. Ha,B.H. Do, P. Huang,W.C. Hsu,C.Y. Lin, E.Y. Chang

The Japan Society of Applied Physics（2018）

Cited 23|Views2
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Abstract
2018 International Conference on Solid State Devices and Materials,InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics
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Key words
Negative Capacitance,Ferroelectricity
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