22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.

There is enormous demand for high-bandwidth DRAM: in application such as HPC, graphics, high-end server and artificial intelligence. HBM DRAM was developed [1] using the advances in package technology: TSV, microbump and silicon-interposer. Owing to these advances, HBM has a much higher bandwidth, at a lower pin speed rate, than conventional DRAM. However, the 3D-stack structure causes TSV interface and PDN problems: TSV connection failure and 3D-accumulation of IR drop, which increases the total cost of HBM. Moreover, as memory bandwidth increases DRAM architectural challenges arise, power consumption and associated thermal problems increase as well.